Levine B F;Malik R J;Walker J,Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides,Applied Physics Letters,1987(05).
[2]
Lu W;Li L;Zheng H L,Development of an infrared detector:Quantum well infrared photodetector,Science in China Series G:Physics Mechanics & Astronomy,2009(07).
[3]
Rogalski A,Quantum well photoconductors in infrared detector technology,Journal of Applied Physics,2003(08).
[4]
Rogalski A,Material considerations for third generation infrared photon detectors,Infrared Physics & Technology,2007(2-3).
[5]
Harrison P,Quantum wells,wires,and dots:Theoretical and computational physics of semiconductor nanostructure,John Wiley & Sons Hoboken,NJ,2005.
[6]
Jin J P;Lin C,Design of optimized Quantum well infrared photodetector\'s structure including higher order effects,Proceedings of Spie,2010.
[7]
Panda S;Panda B K;Fung S,Effect of conduction band nonparabolicity on the dark current in a quantum well infrared detector,Journal of Applied Physics,2007(04).
[8]
Hirayama Y;Smet J H;Peng L H,Feasibility of 1.55 μm intersubband photonic devices using InGaAs/AlAs pseudomorphic quantum well structures,Japanese J Applied Phys,1994.
[9]
Liu H C..Quantum well infrared photodetectors:The basic design and new research directions[J].Chinese Journal of Semiconductors,2001,(05):529-537.doi:10.3321/j.issn:0253-4177.2001.05.001.
[10]
Schneider H;Liu H C,Quantum well infrared photodetectors:Physics and applications,New York:Springer-Verlag,2007.
[11]
Vurgaftman I;Meyer J R;Ram-Mohan L R,Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys,Journal of Applied Physics,2001(11).
