Aoki T, Smith D J , Chang Y, et al. Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy[J]. Appl. Phy. Lett., 2003, 82: 2275.
[2]
Aoki T, Chang Y, Zhao J, et al. Electron microscopy of surface-crater defects on HgCdTe/CdZnTe epilayers grown by molecular-beam epitaxy [J]. Journal of Electron Materials, 2003, 32:703.
[3]
Sewell R H, Musca C A, Antoszewski J, et al. Laser-beam-induced current mapping of spatial nonuniformities in molecular beam epitaxy As-grown HgCdTe[J]. Journal of Electronic Materials, 2004,33(6):572-578
[4]
Stroscio J A, Feenstra R M, Fein A P. Electronic Structure of the Si(111)21 Surface by Scanning-Tunneling Mircoscopy[J]. Physical review lett., 1986,57(20):2579.
[5]
Jager N D, Ebert Ph, Urban K, et al. Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs[J]. PHYSICAL REVIEW B., 2002,65:195318
[6]
Chu J, Xu S, Tang D G. Energy gap versus alloy composition and temperature in Hg1-xCdxTe[J]. Applied Physics Letters, 1983,43(11):1064.
[7]
Chandra D, Aqariden F, Frazier J, et al. Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe[J].J. Electron. Mater., 2000,29(6):887-892
[8]
Shin S H, Bajaj J, Moudy L A, et al. Characterization of Te precipitates in CdTe crystals[J].Appl Phys. Lett., 1983,43:68.
[9]
Ebert Ph, Ivanova L, Eisele H. Scanning tunneling microscopy on unpinned GaN surfaces: Invisibility of valence-band states[J].PHYSICAL REVIEW B, 2009,80:085316
[10]
Feenstra R M, Stroscio J A. Tunneling Spectroscopy of the GaAs(110) surface[J].J.Vac.Sci.Technol.B., 1987,5(4):923-929
[11]
Zha F X (查访星)等,待发表。
[12]
Tersoff J, Hamann D R. Theory of the Scanning Tunneling Microscope[J]. Phys. Rev. B, 1985,31:805
[13]
WU Yan, YU Mei-Fang, CHEN Lu,et al.SDislocation density of MBE grown Hg1-xCdxTe on ZnCdTe substrates[J].Journal of Infrared and Millimeter WavesS(巫艳,于梅芳,陈路等. 采用ZnCdTe衬底的MBE Hg1-xCdxTe位错密度研究, 红外与毫米波学报) 2002,S21(1):S23-27
[14]
Yang J R, Cao X L, Wei Y F, et al. Traces of HgCdTe Defects as Revealed by Etch Pits[J]. Journal of Electronic Materials, 2008, 37(9): 1241-1246.
[15]
CAO Xiu-Liang, YANG Jian-Rong. Study of Etch Pits Characteristic in HgCdTe Epilayer[J]. LASER INFRARED (曹秀亮, 杨建荣. Hg1-xCdxTe外延材料表面腐蚀坑特性的研究；激光与红外) 2005, 35(11):845-848
[16]
Aoki T, Chang Y, Badano G, et al. Defect characterization for epitaxial HgCdTe alloys by electron microscopy. Journal of Crystal Growth, 2004,265:224-234
