D. Chandra ；H. F. Schaake ；M.A. Kinch ；F. Aqariden ；C.F. Wan ；D.F. Weirauch ；H.D. Shih,Activation of Arsenic as an Acceptor in Hg_(1-x)Cd_xTe under Equilibrium Conditions,Journal of Electronic Materials？,2002, 31(7).
[2]
S. VELICU ；C.H. GREIN ；P.Y. EMELIE ；A. ITSUNO ；J.D. PHILIPS ；P. WIJEWARNASURIYA,MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements,Journal of Electronic Materials？,2010, 39(7).
[3]
王珏,The Influence of Impurities and Defects on physical Properties of Hg1-xCdxTe Crystal and the Control Methods,上海:中国科学院上海技术物理研究所,1989.
[4]
Hansen G L;Schmit J L;Casselman T N,Energy Gap versus Alloy Composition and Temperature in Hg1-x Cdx Te,Journal of Applied Physics,1982(10).
[5]
WANG LARRY ；ZHANG LILY H. ；LI JUN,New Techniques in SIMS Analysis of HgCdTe Materials,Journal of Electronic Materials？,1999, 28(6).
[6]
D. CHANDRA ；D.F. WEIRAUCH ；H.F. SCHAAKE ；M.A. KINCH ；F. AQARIDEN ；C.F. WAN ；H.D. SHIH,Growth of Very Low Arsenic-Doped HgCdTe,Journal of Electronic Materials？,2005, 34(6).
[7]
Bubulac L O;Viswanathan C R,Diffusion of As and Sb in HgCdTe,Journal of Crystal Growth,1992(3-4).
[8]
S.H. SHIN ；J.M. ARIAS ；M. ZANDIAN ；J.G. PASKO ；L.O. BUBULAC ；R.E. DE WAMES,Enhanced Arsenic Diffusion and Activation in HgCdTe,Journal of Electronic Materials？,1995, 24(5).
[9]
Shi X H;Rujirawat S;Ashokan R Ionization Energy of Acceptors in As-doped HgCdTe Grown by Molecular Beam Epitaxy [J] 1998(5)
[10]
Higgins W M;Pultz G N;Roy R G,Standard Relationships in the Properties of Hg1-x Cdx Te,Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1989(02).
[11]
Lou L F;Frye W H,Hall Effect and Resistivity in LiquidPhase-Epitaxial Layers of HgCdTe,Journal of Applied Physics,1984(08).
[12]
Kalisher M H,The Behavior of Doped Hg1-xCdx Te Epitaxial Layers Grown from Hg-rich Melts,Journal of Crystal Growth,1984(1-2).
