PETER Capper. Properties of Narrow Gap Cadmium-based Compounds. London: the Institution of Electrical Engineers,EMIS datareviews Series No.10,1994
[2]
Paul R. Norton. Infrared image sensors.Optical Engineering,1991,30(11): 1649-1663
[3]
ZHOU Yong-Dong, FANG Jia-Xiong, ZHAO Jun, et al.The device passivation study for the use of HgCdTe focal plane arrays. Chinese Journal of Functional Materials.(周咏东,方家熊,赵军,等.碲镉汞红外焦平面芯片钝化方案可行性的研究,功能材料),1998,29(Supplement): 113-114
[4]
ZHOU Yong-Dong, FANG Jia-Xiong, Ye Hua-Wei,et al. The sputtering growth of ZnS and the effects on the carrier transfer property in the n-HgCdTe Hall device. Chinese Journal of Functional Materials (周咏东,方家熊,叶华伟,等.ZnS介质膜的溅射生长及其对n-HgCdTe Hall器件输运物的影响,功能材料),1998,29(Supplement): 470-472
[5]
ZHOU Yong-Dong, Zhao Jun, GONG Hai-Mei, et al. Photoconductivity decay study on the ZnS passivated HgCdTe surface. Acta Photonica Sinica(周咏东, 赵军,龚海梅,等.ZnS钝化的HgCdTe表面光导衰退实验表征,光子学报),1998,27(z2):102-106
[6]
ZHOU Yong-Dong, Zhao Jun, GONG Hai-Mei, et al. Surface recombination velocity of the HgCdTe surface passivated with sputtering CdTe film. Journal of Infrared and Millimeter Waves (周咏东, 赵军, 龚海梅,等.CdTe介质膜与HgCdTe晶片间界面特性的研究.红外与毫米波学报),2000,19(1): 71-74
[7]
Willardson R K, Beer A C. Semiconductors and Semimetals. New York: Academic Press, a Subbsidiary of Harcourt Brace Jovanovich, Publishers, 1981,18: 221
[8]
SUN Heng-Hui, BAO Zhong-Ming. Semiconductor Physics Experiment. Beijing: Press of Advanced Education (孙恒慧,包宗明.半导体物理实验.北京: 高等教育出版社),1985: 172
[9]
YUAN Hao-Xing. Dark current characteristic and surface passivation for Hg1-xCdxTe photo-voltaic detector. Doctoral Dissertation, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (袁皓心.Hg1-xCdxTe红外光伏探测器的暗电流机构和表面钝化.博士学位论文,中国科学院上海技术物理研究所),1997
