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LT—GaAs飞秒光电导特性

Keywords: 飞秒激光LT-GaAs超快光电导开关

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Abstract:

采用飞秒脉冲光电探测技术研究低温生长砷化镓光电导开关超快瞬态响应特性.实验测得不同激发波长或偏置电压下LT-GaAs光电导开关瞬态响应驰豫时间约350~390fs,由实验数据计算得到电子迁移率约1000cm

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