Werner J, Kapon E, Stoffel N G, et al. Integrated external cav ty GaAs/AlGaAslasers using selective quantum well disordering,Appl.Phys.Lett. ,1989,55(6):540-542
[2]
Cibert J, Petroff P M, Dolan G J, et al. Optically detected car ier confinement toone and zero dimension in GaAs quantum well wires and boxes, Appl. Phys.Lett.,1986,49(19):1275-1277
LIU X Q. CHEN Chang-Ming, LI Zhi-Feng, et al. Application of the combinatorialapproach to the fabrication of a quantum well multiwavelength emittingchip,Appl.Phys.Lett.,1999,75(17): 2611-2613
[5]
LI Zhi-Feng,LIU Xing-Quan, CHEN Chang-Ming, et al. lon-impl antation approach tofabricate multiwavelength emitting chip,J. Infrared Millim. Waves (李志峰,刘兴权,陈昌明,等.离子注入制备GaAs量子阱集成多波长发光芯片,红外与毫米波学报),2000,19(3):181-184
[6]
CHEN Yi-Dong, LIU Xing-Quan， LI Zhi-Feng, et al. Study on the latticevibrationof GaAs/SrTiO3 MBE eptiaxy monocrystal film， J. Infrar ed Millim. Waves(陈益栋,刘兴权,李志峰,等.GaAs/SrTiO3MBE外延单晶薄膜晶格振动的研究,红外与毫米波学报),2000,19(3): 185-187
[7]
LI Na, LU Wei, LI Ning, et al. The influence of proton implantation and RTA onGaAs/AlGaAs quantum well infrared detector,J. Infrared Millim. Waves (李娜,陆卫,李宁,等.质子注入和快速热退火对GaAs/AlGaAs量子阱红外探测器的影响,红外与毫米波学报),2000,19(1):25-28
[8]
Major J S, Hall D C, Guido L J, etal. High-power disorder-de fined coupled stripe AlyGa1-yAs-GaAs-Inx Ga1-x As quantum wellheterostructure lasers, Appl.Phys.Lett.,1989,55(3): 271-273
[9]
Miyazawa T, Kagawa T, Iwamura H, et al. Growth of (111) CdTe on tilted (001)GaAs,Appl.Phys.Lett.,1989,54(9):828-831
[10]
Lei er H, Forchel A, Maile B E, et al. Carrier capture in intermixed quantum wir eswith sharp lateral confinement, Appl. Phys.Lett.,1989,56(1):4 8-50
[11]
Cibert J, Petroff P M, Werder D J, et al. Kinetics of implantat on enhancedinterdiffusion of Ga and Al at GaAs-GaxAl1-xAs inte rfaces, Appl.Phys.Lett.,1986,49(4):223-225
[12]
Hirayama Y, Horikoshi Y, Okamoto H. Interdiffusion of Al and Ga in Si-Imp lantedGaAs-AlAs Supperlattices, Jpn.J.Appl.Phys.,1984,23:1568 -1571
[13]
Weiss B L, Bradley I V, Whitehead N J, et al. Disordering of AlG aAs/GaAs quantumwell structures using low dose oxygen implantation. J.Appl.Phys.,1992,71(11): 5715-5717
[14]
Ralston J, Wichs G W, Eastman L F, et al. Defect structure and intermixing ofion-implanted AlxGa1-x/GaAs superlattices, J.A ppl.Phys.,1986,59(1): 120-123
[15]
Hirayama Y, Suzuki Y, Tarucha S,et al. Compositional disordering ofGaAs-AlxGa1-xAs superlattice by Ga focused ion beam implan tation and its application tosubmicron structure fabrication.Jpn.J.Appl.Phys. ,1985,24(7): L516-L518
[16]
Gregory F Redibo, Harold G Craighead. Proton implantation intermixing ofGaAs/AlGaAs quantum wells, J.Appl.Phys.,1993,74:3099-3102
[17]
Takagaki Y, Muraki K, Tarucha S. Splitting of resistance peaks and anomalous Hallplateaus in asymmetric double-quantum well structures,Phys.Rev .,1997,B56(3): 1057-1060
[18]
Xiang X D, Sun X D, Briceno G, et al. A combinatorial approach to materialsdiscovery,Science,1995,268(5218):1738-1740
[19]
Liu X Q, Lu W, Li Ning, et al. Wavelength tuning of GaAs/AlGaAs quantum-wellinfrared photodetector response by impuring enhanced intenmixing. COMMAD, 1416Dec.,1998,Perth, Australia 458
