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OPTICALSPECTRAOFLOW-DIMENSIONALSEMICONDUCTORS

Keywords: 光谱,低维半导体,光学增益,总体反转,数值分析

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Abstract:

IntroductionThedevelopmentoflowdimensionalsemiconductormaterialshasbeenextensive[1].Toalargeextent,themodernmicroelectronicsindustryisstilllargelybasedontheconventionaldevicecomponents(withareduceddiscretedevicedimensionfollowingMoore′slaw),whereasth…

References

[1]  Asada M, Miyamoto Y, Suematsu Y. Gain and the threshold of three-dimensionalquantum-box lasers, J.Quantum Electronics, 1986, 22: 1915-1921
[2]  Fu Y, Willander M, Li Z F. et al. Dimensionality of photoluminescence spectrum ofGaAs/AlGaAs system. J. Appl. Phys, 2001, 89: 5112-5116
[3]  Fu Y, Willander M, Xu Wenlan. Optical absorption coefficients of semiconductorquantum-well infrared detectors. J. Appl. Phys, 1995, 77: 4648-4654
[4]  Nalwa H S. Handbook of AdvancedElectronic and Photonic Materials and Devices. San Diego: Academic Press San Diego, 2000
[5]  Kim S, Razeghi M. Chapter 3 Recent advances in quantum dot optoelectronic devicesand future trends, Nalwa H S, In Handbook of Advanced Electronic and Photonic Materialsand Devices. San Diego: Academic Press San Diego 2000, 2: 133-154
[6]  Gunapala S D, Liu J K, Park J S. Et al.9-μm cutoff 256·256 GaAs/AlxGa1-xAsquantum well infrared photodetector hand-held camera. IEEE. Trans. Electron Dvices, 1997,44: 51-57
[7]  Fu Y, Zhao Q X, Ferdos F, et al. Strain and optical transitions in InAs quantumdots on (001) GaAs. Superlattices and Microstructures, 2001, 30: 205-213
[8]  Madelung O. Semiconductors Group IV Elements and Ⅲ-Ⅴ Compounds. Berlin:Springer-Verlag, 1991, 134
[9]  Coldren L A, Corzine S W. Diode Lasers and Photonic InteGrated Circuits. New York:John Wiley & Sons Inc. 1995,130
[10]  Yamada M, Ishiguro H. Gain calculation of undoped GaAs injection laser taking intoaccount of electron intra-band relaxation, Jpn. J. Appl. Phys., 1981, 20: 1279-1288
[11]  Yamanishi M, Lee Y. Phase dampings of optical dipole moments and gain spectra insemiconductor lasers. IEEE J. Quantum Electronics, 1987, 23: 367-370
[12]  Chinn S R, Zory P, Reisinger A R. A model for GRIN-SCH-SQW diode lasers. IEEE J.Quantum Electronics, 1988, 24: 2191-2194
[13]  Kucharska A I, Robbins D J. Lifetime broadening in GaAs-AlGaAs quantum welllasers. IEEE J. Quantum Electronics, 1990, 26: 443-448
[14]  Asada M. Chapter 2 Intraband relaxation effect on optical spectra, In P.S.ZoryQuantum Well Lasers. Jr., San Diego: Academic Press San Diego, 1993

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