全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

Bi3.25La0.75Ti3O12超薄铁电薄膜的光学性质研究

Keywords: 椭偏光谱光学常数光电材料禁带宽度化学溶液沉积法铁电薄膜光子能量光学色散关系表面粗糙度

Full-Text   Cite this paper   Add to My Lib

Abstract:

采用化学溶液沉积法在Pt/Ti/SiO2/Si衬底上制备了厚度小于100nm的Bi3.25La0.75Ti3O12(BLT)铁电薄膜,测量了光子能量为2~4.5eV的紫外可见椭圆偏振光谱.根据经典的电介质光学色散关系和五相结构模型,拟合获得薄膜在透明区和吸收区的光学常数、表面粗糙度、薄膜与衬底界面层以及BLT薄膜的厚度.薄膜在透明区的折射率色散关系可以通过单电子Sellmeier模型成功地进行解释.最后,根据Tauc’s法则,得到Bi0.25La0.7Ti3O12薄膜的直接禁带宽度为3.96eV.

References

[1]  Paz de Araujo C A, Cuchiare J D, Mcmillan L D, et al. Fatigue-free ferroelectric capacitor. Nature, 1995, 374: 627
[2]  Jiang A Q, Hu Z X, Zhang L D. The induced phase transformation and oxygen vacancy relaxation in La-modified bismuth titanate ceramics. Appl.Phys.Lett., 1999, 74(1): 114
[3]  Shimakawa Y, Kubo Y, Tauchi Y, et al. Crystal and electronic structure of Bi4-xLaxTi3O12 ferroelectric materials. Appl.Phys.Lett., 2001, 79(17): 2791
[4]  Lee H N, Hesse D, Zakharov N, et al. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-aixs orientation on silicon substrates. Science, 2002, 296: 2006
[5]  Gu H H, Bao D H, Wang S M, et al. Synthesis and optical properties of highly c-axis oriented Bi4Ti3O12 thin films by sol-gel processing, Thin Solid Films, 1996, 283: 81
[6]  Yamaguchi M, Nagamoto T, Omoto O. Preparation of highly c-axis oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties. Thin Solid Films, 1997, 300: 299
[7]  Wang X S, Zhai J W, Zhang L Y, et al. Structure and optical characterization of Bi4Ti3O12 thin films prepared by metallorganic solution deposition technique. Infrared Physics & Technology, 1999, 40: 55
[8]  Wang G S, Meng X J, Lai Z Q, et al. Structural and optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films prepared by chemical solution methods. Appl.Phys.A, 2002, 76: 83
[9]  Al-Shareef H N, Dimos D, Boyle T J, et al. Qualitative model for the fatigue-free behavior of SrBi2Ta2O9. Appl.Phys.Lett., 1996, 68(5): 690
[10]  Chysicopoulou P, Davazoglou D, Trapalis C, et al. Optical properties of very thin(<100nm) sol-gel TiO2 films. Thin Solid Films, 1998, 323: 188
[11]  HUANG Zhi-Ming, JIN Shi-Rong, CHEN Shi-Wei, et al. Development of infrared spectroscopic ellipsometer by synchronous rotation of the polarizer and analyzer. J.Infrared Millim.Waves(黄志明,金世荣,陈诗伟,等.同时旋转起偏器和检偏器的红外椭圆偏振光谱仪研制.红外与毫米波学报), 1998, 17(5): 321
[12]  Jellison G E Jr, Chisholm M F, Gorbatkin S M. Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometry. Appl.Phys.Lett., 1993, 62(25): 3348
[13]  Forouhi A R, Bloomer I. Optical properties of crystalline semiconductors and dielectrics. Phys. Rev.B, 1988, 38: 1865
[14]  Palik E D. Handbok of Optical Constants of Solids. FL: Academic, Orlando. 1985, 340-341
[15]  Wemple S H, Didomenico M Jr. Optical properties of perovskite oxides in their paraelectric and ferroelectric phases. Phys.Rev.B, 1971, 3: 1338
[16]  Didomenico M Jr, Wemple S H. Oxygen-octahedra ferroelectrics. I. Theory of electro-optical and nonlinear optical effects. J.Appl.Phys., 1969, 40: 720
[17]  Majumder S B, Jain M, Katiyar R S. Investigations on the optical properties of sol-gel derived lanthanum doped lead titanate thin films. Thin Solid Films, 2002, 402: 90
[18]  Tauc J C. Amorphous and Liquid Semiconductor. New York:Plenum Press, 1974, 159
[19]  Rodriguez J, Gomez M, Ederth J, et al. Thickness dependence of the optial properties of sputter deposited Ti oxide films. Thin Solid Films, 2000, 365: 119

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133