Lawson W D, Nielson S, Putley E H, et al. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe. J.Phys. Chem. Solids, 1959, 9: 325-329
[2]
HUANG Hui, XU Jing-Jun, WANG Ji-You, et al. Photoluminescence of HgCdTe/CdZnTe epitaxial films grown by MOCVD. Chinese J. of Luminescence (黄晖,许京军,王吉有, 等. MOCVD外延HgCdTe/CdZnTe 薄膜的光致发光. 发光学报), 2002, 23(2): 133-136
[3]
Capper P. Direct energy gap of HgCdTe. In: Capper Peter ed. Properties of Narrow-Gap Cadmium-based Compounds. EMIS Datareviews Series 10. London: IEE-INSPEC, 1994, 207-211
[4]
Swarts C A, Daw M S, McGill T C. Bulk vacancies in CdxHg1-xTe. J.Vac.Sci.Technol., 1982, 21: 198-200
[5]
Wang C L, Wu S, Pan D S. Application of generalized effective mass theory to some native point defects in Hg1-xCdxTe. J.Vac.Sci.Technol., 1983, A 1(3): 1631-1632
[6]
Broudy R M, Mazurczyk V J. Semiconductors and Semimetals. New York: Academic Press, 1981, 18: 157-161
[7]
Brice J, Capper P, eds. Properties of Mercury Cadmium Telluride. EMIS Datareview Series 3.London: IEE-INSPEC 1987: chap.1
[8]
Capper P ed. Properties of Narrow Gap Cadmium-based Compounds. EMIS Datareview Series 10. London: IEE-INSPEC 1994: chap.1
[9]
Capper P ed. Gap Ⅱ-Ⅳ Compounds for Opotoelectronic and Electromagnetic Applications. London: Chapman & Hall Press, 1997
[10]
Turrell G, Corset J, eds. Raman Microscopy-Developments and Applications. New York: Academic Press, 1996: Chap.2
[11]
Huang H, Xu J J, Qiao H J, et al. Micro-photoluminescence and micro-Raman spectra of MOCVD HgCdTe/CdZnTe epitaxial films. Semicondors Science and Technology. 2001, 16: L85-L88
