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在TEA-CO2强激光脉冲作用下Hg0.8Cd0.2Te晶片表面的组分变化

Keywords: 碲镉汞组分变化激光辐照TEA-CO2脉冲激光

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Abstract:

利用场发射扫描电子显微镜对TEA-CO2强激光脉冲辐照的Hg0.8Cd0.2Te晶片表面进行了观察,并利用电镜自带的能谱分析仪对其表面进行了成分分析.在单脉冲能量为1.91J,峰值功率密度为2.63×107W/cm2的脉冲CO2激光辐照下,晶片表面呈现出熔融迹象,且晶片表面的化学组分比发生明显的变化.理论与实验研究结果表明激光急速加热使晶体表面的Hg-Te键破坏,从而导致Hg损失,而Hg损失程度与热作用过程的时间有关.随着脉冲作用次数的增加,多脉冲的连续作用使Hg损失加剧,晶片表面成分变化更加突出.

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