Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys [J]. Journal of Applied Physics, 2001, 89(11): 5815-5875.
[2]
Jelen C, Slivken S, Guzman V et al. InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths [J]. IEEE Journal of Quantum Electronics, 1998, 34 (10): 1873-1876.
[3]
Schlereth T W, Schneider C, Kaiser W, et al. Low threshold, high gain AlGaInAs quantum dot lasers [J]. Applied Physics Letters 2007, 90: 221113.
[4]
Chang H L, Huang S C, Chen Y F, et al. Efficient high-peak-power AlGaInAs eye-safe wavelength disk laser with optical in-well pumping [J]. Optics Express, 2009, 17(14): 11409-11414.
[5]
Zhang Y G, Gu Y, Gas source MBE grown wavelength extending InGaAs photodetectors, Advances in Photodiodes, Gian-Franco D B (Ed.) [M], Croatia: InTech, 2011, 349-376.
[6]
Selmic S R, Chou T M, Sih J P, et al. Design and characterization of 1.3 μm AlGaInAs-InP multiple-quantum-well lasers [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2001, 7(2): 340-349.
[7]
Cheng J, Shieh C L, Huang X, et al. Efficient CW lasing and high-speed Modulation of 1.3 μm AlGaInAs VCSELs with good high temperature lasing performance [J]. IEEE Photonics Technology Letters, 2005, 17(1): 7-9.
[8]
Watanabe I, Sugou S, Ishikawa H, et al. High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product [J]. IEEE Photonics Technology Letters, 1993, 5(6): 675-677.
[9]
Goldstein L, Praseuth J P, Joncour M C, et al. MBE growth of AlxGayIn1-x-yAs for a DHBT structure [J]. Journal of Crystal Growth, 1987, 81(1-4): 396-399.
[10]
Liu W C, Wang, W C, Pan H J, et al. Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications [J]. IEEE Transactions on Electron Devices, 2000, 47(8): 1553-1559.
[11]
Wu C S, Chan Y J, Shien J L, et al. In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMT with improved device reliability [J]. Electronics Letters, 1995, 31(13): 1105-1106.
[12]
Whelan C S, Hoke W F, McTaggart RA, et al. Low noise In0.32(AlGa)0.68As/In0.43Ga0.57As metamorphic HEMT on GaAs substrate with 850 mW/mm2 output power density [J]. IEEE Electron Device Letters, 2000, 21(1): 5-8.
[13]
Chua S J and Ramam A. Photoluminescence observations in band-gap tailored InGaAlAs epilayers lattice matched to InP substrate [J]. Journal of Applied Physics,1996, 80(8): 4604-4608.
