1James R. Shealy, Jiali Wang, Richard Brown. Methodology for Small-Signal Model Extraction of AlGaN HEMTs[J]. IEEE TRANSACTRON DEVICES, 2008, 55(7)： 1603.
[2]
2Campos-Roca Y, Massier H, Leuther A. Scalable HEMT Small-Signal Model Extraction based on a Hybrid Multibias Approach[J]. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, 2011, 109.
[3]
3Jianjun Gao, Xiuping Li, Hong Wang, et al. A New Method for Determination of Parasitic Capacitances for PHEMTs[J]. Semicond. Sci. Technol. 2005, 20： 586-591, 587.
[4]
4MacFarlane D, Taking S, Murad S K, et al. Small Signal and Pulse Characteristics of AlN/GaN MOS-HEMTs[J]. Proceeding of the 6thEuropean Microwave Integrated Circuits Conference, 342.
[5]
5Damian Costa, William U Liu, James S Harris. Direct Extraction of the AlGaAs/GaAs Hetero-junction Bipolar Transistor Small-Signal Equivalent Circuit[J]. IEEE TRANSACTION ON ELECTRON DEVICE, 1991, 38(9)： 2019-2020.
[6]
6Apolinar J Reynoso-Hernandez, Francisco Elias Rangel-Patino, Julio Perdomo. Full RF Characterization for Extracting the Small-Signal Equivalent Circuit in Microwave FETs[J]. IEEE TRANSCATIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44(12)： 2625.
[7]
7Giovanni Crupi, Dongping Xiao, Dominique M M -P. Schreurs. Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs[J]. IEEE TRANSCATIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54(10)： 3620.
[8]
8Jianjun Gao. RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors[M]. SciTech Publishing, Raleigh, 2010, N. C.
