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热丝化学气相沉积法在CH4/H2混合气体中低温生长超薄纳米金刚石膜

Keywords: 热丝化学气相沉积纳米金刚石膜超声波预处理低温生长光吸收系数

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Abstract:

用热丝化学气相沉积方法研究了低温(~550℃)和低反应气压(~7Torr)下硅片上金刚石膜的成核和生长.成核过程中采用2.5%的CH4浓度,在经充分超声波预处理的硅片上获得了高达1.5×1011cm.的成核密度.随CH4浓度的增加所成膜中的金刚石晶粒尺寸由亚微米转变到纳米级.成功合成了表面粗糙度小于4nm、超薄(厚度小于500nm)和晶粒尺寸小于50nm的纳米金刚石膜.膜与衬底结合牢固.膜从可见光至红外的光吸收系数小于2×104cm-1.用我们常规的HFCVD技术,在低温度和低压下可以生长出表面光滑超薄的纳米金刚石膜.

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