XIONG Bing,WANG Jian,SUN Chang-Zheng,et al.Study on DFB laser integrated EA modulators based on an identical epitaxial layer structure [ J ].J.Infrared Millim.Waves(熊兵,王健,孙长征,等.同一外延层结构高速DFB激光器/EA调制器集成光源的研究.红外与毫米波学报),2002,21(S1):19-22.
[2]
FU Shi-Jing,TONG Zhou-Sen,LIU Ye-Xin,et al.Design and analysis of millimeter traveling-wave electroabsorption modulator\'s electrode[J].J.Infrared Millim Waves(傅思镜,童洲森,刘叶新,等.毫米波行波电吸收调制器电极的设计与分析.红外与毫米波学报),2004,23(4):291-294.
[3]
Bond A E,Shtengel G,Singh P,et al.High speed packaged electroabsorption modulators for optical communications [ C ].50th Electronic Components and Technology Conference,Las Vegas,NV,USA,2000.
[4]
Feng H,Makino T,Ogita S,et al.40Gb/s electro-absorption-modulator-integrated DFB laser with optimized design[ C].Optical Fiber Communication Conference and Exhibit,Anaheim,CA,United States,2002.
[5]
Xiong B,Wang J,Cai P F,et al.Novel low-cost wideband Si-based submount for 40Gb/s optoelectronic devices [ J ].Microw.Opt.Techn.Let.,2005,45(1):90-93.
[6]
Katz A,Pearton S J,Nakahara S,et al.sTantalum nitride films as resistors on chemical vapor deposited diamond substrates[J].J.Appl.Phys.,1993,73(10):5208-5212.
[7]
Henderson R,Zurcher P,Duvallet A,et al.Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms[ C ].Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.Ann Arbor,MI.USA,2001.
[8]
Poate J M,Tu K N,Mayer J W.Thin Films:Interdiffusion and Reactions [M].New York:Wiley,1978.
[9]
Morabito J M,Thomas J H,Lesh N G.Material characterisation of Ti-Cu-Ni-Au (TCNA)-a new low cost thin film conductor system[ J].IEEE Transactions on Parts,Hybrids and Packaging,1975,11(4):253-262.
[10]
Xiong B,Wang J,Zhang L J,et al.High-speed (＞40GHz) integrated electroabsorption modulator based on identical epitaxial layer approach [ J ].IEEE Photon.Technol.Lett.,2005,17 (2):327-329.
