Hoogeveen R W M,van der A R J,Goede PH.Extended wavelength InGaAs infrared (1.0-2.4μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere[J].Infrared Phys.& Tech.,2001,42:1-16.
[2]
JIA Jia,CHEN Gui-Bin,GONG Hai-Mei,et al.Study on the junctions of SWIR HgCgTe photo diodes at room temperature with laser beam induced current [J].J.Infrared Millim.Waves(贾嘉,陈贵宾,龚海梅,等.室温短波碲镉汞结区的LBIC方法研究.红外与毫米波学报),2005,24(1):11-14.
[3]
Makita K,Torikai T,Ishihara H,et al.GaInAs/InAsP pin photodiodes for long wavelength regions (λ 》2μm) grown by HVPE[J].Electron.Lett.,1988,24:379-380.
[4]
Martinelli R U,Zamerowski T J,Longeway P A.2.6μm InGaAs photodiodes [ J ].Appl.Phys.Lett.,1988,53:989-991.
[5]
Linga K R,Olsen G H,Ban V S,et al.Dark current analysis and characterization of InGaAs/InAsP graded photodiodes with x 》0.53 for response to longer wavelength (》1.7μm)[J].IEEE J.Lhghtwave Tech.,1992,10:1050-1055.
[6]
di Forte-Poisson M A,Brylinski C,di Persio J,et al.GaInAs/InAsP/InP photodiodes for the 1.6 to 2.4μm spectral region grown by low preasure MOCVD [ J ].J.Crystal Growth,1992,124:782-4791.
[7]
Wada M,Hosomatsu H.Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by MOVPE [ J ].Appl.Phys.Lett.,1994,64:1265-1267.
[8]
D\' Hondt M,Moerman I Daele P V,et al.Influence of buffer layer and processing on the dark current of 2.5 μmwavelength 2%-mismatched InGaAs photodetectors [ J ].IEE Proc.Optoelectron.,1997,144:277-282.
