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(TbBi)3GaxFe5-xO12薄膜/(TbYbBi)3Fe5O12晶体复合结构的生长和在光通信波段的磁光性能

Keywords: 稀土铁石榴石,薄膜/晶体复合结构,磁光性能,温度系数,石榴石薄膜,石榴石晶体,复合结构,生长,通信波段,磁光性能,BAND,OPTICALCOMMUNICATION,PROPERTIES,GROWTH,FILM,COMPOSITESTRUCTURE,光通讯器件,光隔离器,温度稳定,宽带,综合,结果,法拉第旋转温度系数,磁化强度

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Abstract:

用助熔剂法生长出掺Bi复合稀土铁石榴石晶体((TbYbBi)3Fe5O12),用(TbYbBi)3Fe5O12替代传统的无磁性Gd3Ga5O12晶体作基底液相外延掺Bi稀土铁鎵石榴石薄膜((TbBi)3GaxFe5-xO12).测量了Tb0.87Yb1.62Bi0.51Fe5O12晶体和Tb2.43Bi0.57Ga0.12Fe4.88O12薄膜/Tb0.87Yb1.62Bi0.51Fe5O12晶体复合结构材料在光通信波段(波长A=1500~1620nm)处的光透射谱(T)、饱和磁化强度(Ms,0.5×106A/m)、法拉第旋转温度系数(FTC,5×10-5/K)和法拉第旋转波长系数(FWC,0.05%/nm).所得结果表明:Tb2.43Bi0.57Ga0.1Fe4.9O12薄膜/Tb087Ybi62Bi0.51Fe5O12晶体复合结构材料的综合性能适用于宽带和温度稳定的光隔离器及其他光通讯器件.

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