Aggarwal R J,Fonstad C G,Jr.High peak-to-valley current ratio In0.22Ga0.78As/AlAs RTDs on GaAs using relaxed Inx Ga1-x buffers[J].Electron Lett.,1995,31(1):75-77.
[2]
Su Y K,Chang J R,Lu Y T,et al.Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature[J].IEEE Electron Device Lett.,2000,21(4):146-148.
[3]
Mendez E E,Wang W I,Ricco B,et al.Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructures[J].Appl.Phys.Lett.,1985,47(4):415-417.
[4]
Gennser U,Kesan V P,Iyer S S,et al.Resonant tunneling of holes through silicon barriers[J].J.Vac.Sci.Technol.B.,1990,8(2):210-213.
[5]
Lampin J F,Mollot F.Light-hole resonant tunneling through a tensile-strained GaAsP quantum well[J].Appl.Phys.Lett.,1997,71(8):1080-1082.
[6]
Skolnick M S,Hayes D G,Simmonds P E,et al.Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields[J].Phys.Rev.B.,1990,41:10754-10766.
[7]
Blakesley J C,See P,Shields A J,et al.Efficient Single Photon Detection by Quantum Dot Resonant Tunneling Diodes[J].Phys.Rev.Lett.,2005,94:067401-1-4.
Teran F J,Eaves L,Mansouri L,et al.Trion formation in narrow GaAs quantum well structures[J].Phys.Rev.B.,2005,71:161309-1-4.
[10]
Charbonneau S,Young J F,Spring Thorpe A J.Tunneling of photoexcited holes through a double-barrier resonant tunneling structure observed by time-resolved photoluminescence[J].Appl.Phys.Lett.,1990,57 (3):264-266.
