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锆钛酸铅多层膜的铁电和介电特性

Keywords: PZT多层膜,铁电,介电,极性缺陷复合体

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Abstract:

研究了特异结构锆钛酸铅PbZr0.38Ti0.62O3(PZT)多层膜的铁电和介电特性.同均一相PZT薄膜材料相比,由致密层和多孔层交替排列形成的近周期PZT多层膜具有铁电、介电增强效应.在100V极化电压下,多层膜的平均剩余极化强度达42.3μC/cm2,矫顽场为43kV/cm.大的极化强度值归因于大的膜厚和多孔结构有效释放膜内张应力的结果.室温低频限下,PZT多层膜的表观相对介电常数超过2000.极为有趣的是,在所研究的频率范围,PZT多层膜具有两种截然不同的介电驰豫.低频介电损耗峰源自空间电荷极化;而遵从Arrhenius律的高频介电响应可能同与氧空位Vo"相关的极性缺陷复合体有关.

References

[1]  LIN Tie,SUN Jing-Lan,MENG Xiang-Jian,et al.Ferroelectric film thickness dependence of infrared detector with an SiO2 aerogel thermal insulation layer[J].J.Infrared Millim.Waves(林铁,孙璟兰,孟祥建,等,用SiO2气凝胶做隔热层的铁电薄膜红外探测器性能与铁电薄膜层厚度的关系.红外与毫米波学报),2007,26:329-331.
[2]  Hu G J,Chen J,An D L,et al.Fabrication of ferroelectric PbZr0.4Ti0.6O3 multilayers by sol-gel process[J].Appl.Phys.Lett.,2005,86:162905-162907.
[3]  Hu G J,Hong X K,Chu J H,et al.Ferroelectric and optical properties of quasiperiodic PbZr0.5 Ti0.5 O3 multilayers grown on quartz wafers[J].Appl.Phys.Lett.,2007,90:162904-162906.
[4]  HU Gu-Jin,HONG Xue-Kun,CHEN Jing,et al.Formation mechanism of periodical ferroelectric multilayers with high optical reflectivity[J].J.Infrared Millim.Waves (胡古今,洪学鸥,陈静,等.高反射率周期性铁电多层膜形成机理研究.红外与毫米波学报),2007,26(2):89-91.
[5]  Hu G J,Hong X K,Sun J L,et al.Peculiar ferroelectric and dielectric properties of quasiperiodic PbZr0.4 Ti0.6 O3 multilayers[J].New J.Phys.,2006,8:386 (1-7).
[6]  Kumazawa T,Kumagai Miura Y H.Effect of external stress on polarization in ferroelectric thin films[J].Appl.Phys.Lett.,1998,72:608-610.
[7]  Kui Y,Yu Sh H,Francis E T,et al.Residual stress analysis in ferroelectric PbZr0.52Ti0.48O3 thin films fabricated by sol-gel process[J].Appl.Phys.Lett.,2003,82:4540-4542.
[8]  Wei Chuan Goh,Kui Y,Ong C K.Pseudo-epitaxial lead zirconate titanate thin film on silicon substrate with enhanced ferroelectric polarization[J].Appl.Phys.Left.,2005,87:072906-072908.
[9]  Pike G E,Warren W L,Dimos D,et al.Voltage offsets in (Pb,La)(Zr,Ti) O3 thin films[J].Appl.Phys.Lett.,1995,66:484-486.
[10]  Chen Ang and Zhi Yu.Dielectric behavior of PbZr0.52Ti0.48 O3 thin films:Intrinsic and extrinsic dielectric responses[J].Appl.Phys.Left.,2004,85:3821-3823.
[11]  Erbil A,Kim Y,and Gerhardt R A.Giant permittivity in epitaxial PbTiO3/Pb1-x Lax TiO3 heterostructures[J].Phys.Rew.Lett.,1996,77:1628-1631.
[12]  Lunkenheimer P,Bobnar V,Pronin A V,et al.Orion of apparent colossal dielectric constants[J].Phys.Rev.B,2002,66:052105(1-4).
[13]  Steinsvik S,Bugge R,Gjonnes J,et al.The defects structure of SrTi《1-xFexTiO3-y investigated by electrical conductivity measurements and electron energy loss spectroscopy (EELS)[J].Phys.Chem Solids.,1997,58:969-976.

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