【1】DU Feng-Juan, LIU Yi, TAO Ke-Yu, et al. Structural and optical properties of Bi 4-x La x Ti 3 O 12 thin films [J]. J. Infrared Millim Waves (杜凤娟, 刘毅, 陶科玉, 等. Bi 4-x La x Ti 3 O 12 铁电薄膜结构和光学性能研究. 红外与毫米波学 报 ), 2007, 26 (5):332—335.
[2]
【2】Yang P X, Carroll D L, Ballato J, et al. Electrical properties of SrBi 2 Ta 2 O 9 ferroelectric thin films at low temperature [J]. Appl Phy Lett., 2002, 81: 4583—4585.
[3]
【3】Yang P X, Guo M, Shi M R, et al. Spectroscopic ellipsometry of SrBi2Ta 2-x Nb x O 9 ferroelectric thin films[J]. J. Appl Phy., 2005, 97 (10):106106—3.
[4]
【4】Boivin J C, Mairesse G. Recent material developments in fast oxide ion conductors[J]. Chem Mater., 1998, 10 (10): 2870—2888.
[5]
【5】Lee C K, West A R. Thermal behaviour and polymorphism of BIMEVOX oxide ion conductors including the new materials: Bi 4 V 2 O 11 : M; M = La, Y, Mg, B[J]. Solid State Ionics, 1996, 86—88:235—239.
[6]
【6】Watanabe A, Das K. Time-dependent degradation due to the gradual phase change in BICUVOX and BICOVOX oxide-ion conductors at temperatures below about 500℃[J]. J. Solid State Chem., 2002, 163: 224—230.
[7]
【7】ZHANG De-Yin, HUANG Da-Gui, LI Jin-Hua, et al. Preparation and dielectric properties of LiTaO 3 thin film on the ITO substrate[J]. J. Infrared Millim Waves (张德银, 黄大贵, 李金华, 等.ITO衬底上LiTaO 3 薄膜的制备与介 电特性. 红外与毫米波学报 ), 2007, 26 (3):170—173.
[8]
【8】QIN Su-Mei, TONG Zi-Yang, DENG Hong-Mei, et al. Effect of rapid thermal annealing on property of nano-SnO 2 thin film[J]. J. Infrared Millim. Waves (秦苏梅, 童梓洋, 邓红梅, 等.快速热退火对纳米晶粒SnO 2 薄膜性质的影 响. 红外与毫米波学报 ), 2008, 27 (2):101—104.
[9]
【9】Meng X J, Sun J L, Ye H J. Preparation of highly (100)oriented metallic LaNiO 3 films on Si substrates by a modified metalorganic decomposition technique[J]. Appl Surface Sci, 2001, 171 :68—70.
[10]
【10】Tsukada K, Nagahama T, Sohma M, et al . Preparation of (001) and (114)-oriented epitaxial thin films of Bi 2 VO 5.5 by a coating pyrolysis process[J]. Thin Solid Films, 2003, 425: 97—102.
[11]
【11】Kumari N, Krupanidhi S B, Varma K B R. Dielectric, impedance and ferroelectric characteristics of c-oriented bismuth vanadate films grown by pulsed laser deposition [J]. Mater Sci Eng B., 2007, 138: 22—30.
[12]
【12】Nimat R K, Joshia R S, Pawar S H. Temperature dependent conductivity and dielectric properties of Bi 2 V 0.9 Cu 0.1 O 5.35 solid electrolyte thin films[J]. Mater. Sci. Eng. B., 2007, 137: 93—98.
[13]
【13】Sidebottom D L, Green P F, Brow R K. Structural correlations in the ac conductivity of ion-containing glasses side bottom[J]. J. Non-Cryst Solids, 1997, 222: 354—360.
[14]
【14】Steil M C, Fouletier J, Labrune P. BICOVOX:Sintering and grain size dependence of the electrical properties[J]. J. Eur Ceram Soc., 1999, 19: 815—818.
[15]
【15】Pernot E, Anne M, Bacmann, M, et al . Structure and conductivity of Cu and Ni-substituted Bi 4 V 2 O 11 compounds [J]. Solid State Ionics, 1994, 70—71: 259—263.
[16]
【16】Pirovano C, Steil M C, Capoen E, et al . Impedance study of the microstructure dependence of the electrical properties of BIMEVOXes[J]. Solid State Ionics, 2005, 176: 2079— 2083.
