【1】Chen M C, List R S, Chandra D, et al. Key performace-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes[J]. J.Electron.Mater, 1996, 25(8): 1375-1382.
[4]
【2】Wijewarnasuriya P S, Zandian M, Yong D B, et al. Microscopic Defects on MBE Grown LWIR Hg1-xCdxTe Material and their Impact on Device Performance[J]. J.Electron.Mater, 1999, 28(6): 649-654.
[5]
【3】Bhan R K, Koul S K, Basu P K. Analysis of the idealith factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region[J]. Semiconductor Sci. and Tech., 1997,12: 448-454.
[6]
【5】Paul F Fewster. X-ray Scattering from Semiconductors[M]. London: Imperial College Press, 2000,243-276.
[7]
【6】Ni WX, Lyytovich K, Alami J, et al. X-ray reciporcal space mapping studies of strain relaxtion in thin SiGe layers(≤100mm) using a low temperature growth step[J]. J.Crystal Growth, 2001, 227/228: 756-760.
[8]
【7】White J K, Antoszewski, Pal R, et al. Passivation effect on reactive-lon-etch-formed n-on-p Junctions in HgCdTe. [J]J.Electron.Mater, 2002, 31(7): 743-748.
