Ebothe J. Dependence of the sprayedCdS photoelectrode behavior upon the pyrolysis atmosphere[J]. SPIE, 1988, 1016: 84-88
[2]
Ullrich B, Sakai H, Segawa Y. Optoelectronic properties of thin film CdS formed byultraviolet and infrared pulsed-laser deposition[J]. Thin Solid Films, 2001, 385: 220-224
[3]
Dzhafarov T D, Altunbas M, Kopya A I, et al. Formation of P-type CdS thin films bylaser-stimulated copper diffusion[J]. J.Phys D, 1999, 32: L125-128
[4]
Oumous H, Hadiri H. Optical and electrical properties of annealed CdS thin filmsobtained from a chemical solution[J]. Thin Solid Films, 2001, 386: 87-90
[5]
Pavaskar N R, Menezes C A, Sinha A P B. Photoconductive CdS films by a chemicalbath deposition process[J]. J.Electrochem.Soc., 124: 743-748
[6]
Ichimura M, Goto F, Arai E. Structural and optical characterization of CdS filmsgrown by photochemical deposition[J]. J.Appl.Phys.,1999, 85: 7411-7417
[7]
Huang N K. Morphology of the deposited films with a technique of combining ion,electron and atom beams[J]. Nuclear Techniques(离子束电子束原子束结合沉积薄膜的形貌特征,核技术),1992, 8: 499-503
[8]
Cullity B D. Elements of x-ray diffraction 2nd ed.[M]. USA: Addison-Wesley Pub.Company, 1978
