Bajaj J, Tennant W E, Zucca R, et al. Spatially resolved characterization of HgCdTe materials and devices by scanning layer microscopy [J]. Semicond. Sci. Technol.,1993,8:872-887.
[3]
Musca C A, Redfern D A, et al. Junction depth measurement in HgCdTe using laser beam induced current(LBIC)[J]. Journal of Electronic Materials,1999,28(6):603-610.
[4]
Antoszewski J, Musca C A, Dell J M. Characterization of HgCdTe n on p-type structures obained by reactive ion etching induced p-to-n conversion [J]. Journal of Electronic Materials,2000,29(6):837-840.
[5]
YE Zhen-Hua, WU Jun, HU Xiao-Wing, et al. Study of integrated MW1/MW2 two-color HgCdTe infrared detetor arrays [J]. J. Infrared Millim Waves (叶振华,吴俊,胡晓宁,等. 集成式HgCdTe红外双色探测器列阵.红外与毫米波学报),2004,23(3):193-196.
[6]
Zanatta J P, Ferret P, Loyer R, et al. Single and two color infrared focal plane arrays made by MBE in HgCdTe [J]. SPIE, 2000, 4130:441-451.
[7]
Terterian S,Chu M,Mesropian M, et al. A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays [J]. Journal of Electronic Materials,2002,31(7):720-725.
[8]
Ebe H, Tanaka M, Miyamoto Y. Dependency of p-n junction depth on ion species implanted in HgCdTe [J]. Journal of Electronic Materials,1999,28(6):854-857.
[9]
Haakenaasen R, Colin T, Steen H. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1-xTe [J]. Journal of Electronic Materials,2000,29(6):849-852.
[10]
White J, Pal R, Dell J M, et al. P-to-n type-conversion mechanisms for HgCdTe exposed to H2/CH4 plasmas [J]. Journal of Electronic Materials,2001,30(6):762-767.
[11]
Musca C A, Siliquint J F, Smith E P G, et al. Laser beam induced current image of reactive ion etching induced n-type doping in HgCdTe [J]. Journal of Electronic Materials,1998,27(6):661-667.
[12]
Fynn K A, Faraone L. Laser beam induced current(LBIC)spatial imaging as a characterization tool for infrared HgCdTe materials and devices [J]. SPIE, 1995, 2552:134-145.
[13]
JIA Jia, CHEN Gui-Bin, GONG Hai-Mei, et al.Study on the junetions of swir HgCdTe photo diodes at room temperatwre with laser vean ubdyced cyrrent [J]. J. Infrared Millim waves (贾嘉,陈贵宾,龚海梅,等.室温短波碲镉汞结区的LBIC方法研究.红外与毫米波学报), 2005,24(1):11-14.
