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核技术  2014 

离子辐照缺陷对太赫兹波发射性能的影响

DOI: 10.11889/j.0253-3219.2014.hjs.37.040501, PP. 40501-40501

Keywords: 蒙特卡罗模拟,太赫兹发射晶体,离子辐照缺陷

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Abstract:

应用半经典的蒙特卡罗方法,模拟计算了处于不同缺陷条件下的砷化镓在超快激光激发下的载流子输运行为及其相应的太赫兹波发射性能。计算结果表明,缺陷的类型和浓度都会对太赫兹波的脉宽和峰高产生显著的影响。分别采用500keV和1.5MeV的氮离子在不同剂量下辐照了半绝缘的砷化镓和掺铁磷化铟样品,并将辐照样品制备成太赫兹波发射天线。通过对辐照样品的太赫兹波发射能力进行测量,发现不同辐照条件下制备的太赫兹发射天线其太赫兹波的脉宽基本一致,只有峰高随辐照产生的缺陷浓度增大呈现先增大后减小的变化。结合理论计算和实验测量结果,分析讨论了光电导材料太赫兹波发射的缺陷机制。

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