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核技术  2015 

电子对效应对D-T次生γ密度测量的影响

DOI: 10.11889/j.0253-3219.2015.hjs.38.080502, PP. 80502-80502

Keywords: 密度测井,次生γ源,D-T可控中子源,康普顿散射,电子对效应

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Abstract:

为研究电子对效应对D-T可控中子源地层密度测量精度的影响,本文首先分析传统的化学源密度测井原理,其次研究中子次生γ射线发生电子对效应与康普顿散射的质量衰减系数差异,并使用蒙特卡罗模拟方法研究传统密度测井和中子次生源密度测量精度,计算其误差大小、分析误差来源和提出校正方法。结果表明,密度测井主要利用γ射线的康普顿散射,当使用中子次生的高能γ射线测量地层密度时,其精度比化学源方法低,这种误差主要是由于高能γ射线的电子对效应引起,最大可以达到传统方法的2.7倍;电子对效应对于地层岩性比较敏感,如果对衰减的γ信号进行岩性校正,则可以提高密度测量的精度。

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