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核技术  2015 

3MeV电子辐照加速器主厅内漂移管周围辐射场分析

DOI: 10.11889/j.0253-3219.2015.hjs.38.020201, PP. 20201-20201

Keywords: 加速器主厅辐射场,通孔,屏蔽设计,MCNP5

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Abstract:

对漂移管周围不同方向剂量水平及其影响因素进行定量评估,有助于对电子辐照加速器主厅内辐射分布建立定性认识。由于加速管沿程束流损失和来自辐照室的透射辐射对加速器主厅的贡献极小,辐照室内经过漂移管外孔隙的散射辐射是加速器主厅的主要辐射源。本文利用蒙特卡罗程序MCNP5对某3MeV高频高压加速器机房进行建模,着重探索不同类型地板圆形通孔对加速器主厅剂量的影响程度。结果表明,通孔直径对垂直方向剂量率的影响极小,而水平方向剂量率随直径的不同而变化明显。对于直径10cm左右的漂移管,通孔采用直径40–60cm圆孔较佳;通孔中采用阶梯型圆台结构不仅节省了加速器轴向高度,更能有效地降低漂移管周围的辐射水平。

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