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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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典型FLASH存储器60Coγ电离辐射效应测试与分析
DOI: 10.11889/j.0253-3219.2015.hjs.38.010202, PP. 10202-10202
Keywords: FLASH存储器,电离辐射效应,辐照敏感参数,辐照偏置条件
Abstract:
通过测量卫星用FLASH存储器的内部存储数据逻辑状态出错(WW≠0)、电源电流、输出高低电平电压、输入漏电流以及交流参数随辐照剂量的变化情况，对FLASH存储器的电离辐射效应损伤规律、敏感参数进行了研究。研究结果表明，FLASH存储器的电离辐射效应损伤规律主要表现为随辐照剂量增加，存储数据逻辑状态出现错误，数据读取、数据擦除以及维持模式下的电源电流逐渐增大，这些参数可以作为辐照敏感参数；动态辐照偏置下存储数据逻辑状态出错时的剂量阈值比静态辐照偏置和不加电辐照偏置条件下大一个数量级以上。
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