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材料工程  2011 

芯片上单链DNA生物膜的弯电性能分析

, PP. 11-14

Keywords: DNA生物膜,电势,变形,弯电效应,非线性Poisson-Boltzmann方程

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Abstract:

基于非线性Poisson-Boltzmann(NLPB)方程和液晶薄膜弯电理论,利用Fogolari修正公式,建立了单链DNA(ss-DNA)分子结构特征、溶液离子浓度等因素与生物膜电势、芯片宏观变形之间的非线性多尺度关系。结合现有的实验数据,拟合了单链DNA生物薄膜的弯电系数,并将生物膜电势分布及芯片变形的线性预测和非线性预测进行了比较,阐明了非线性多尺度关系的有效性。考察了DNA链片断数和封装密度等因素对芯片变形的影响。结果表明随着DNA链片断数和封装密度的增加,芯片变形逐渐增加。

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