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材料工程  2012 

C/SiC复合材料的低温制备工艺研究

, PP. 44-47

Keywords: PCS,C/SiC,复合材料,先驱体浸渍裂解,低温制备

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Abstract:

陶瓷基复合材料制备温度过高一直是制约其引入主动冷却工艺、突破其本征使用温度的主要原因之一。采用差热(TG-DTA)、红外(IR)、X射线衍射(XRD)等分析测试手段,研究了聚碳硅烷(Polycarbosilane,PCS)的裂解及化学转化过程,从理论上说明了先驱体聚碳硅烷(PCS)低温(<1000℃)陶瓷化的可行性。结果表明聚碳硅烷在750℃实现无机化,880℃开始结晶,即聚碳硅烷在高温合金耐受温度范围(<1000℃)内,即可实现陶瓷化。以聚碳硅烷(PCS)为先驱体,炭纤维为增强体,采用先驱体浸渍裂解(PIP)工艺低温制备了炭纤维增强碳化硅(C/SiC)陶瓷基复合材料,当制备温度为900℃时,所制备C/SiC复合材料密度为1.70g/cm3,弯曲强度达到657.8MPa,剪切强度为61.02MPa,断裂韧性为22.53MPa·m1/2,并采用扫描电子显微镜(SEM)对复合材料的微观形貌进行了分析。

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