OALib Journal期刊
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SrBi2Ta2O9铁电薄膜的结构与性能研究进展
, PP. 44-47
Keywords: SrBi2Ta2O9,铁电薄膜,结构,性能
Abstract:
综述了SrBi2Ta2O9的结构和性能研究进展,着重阐明化学组成、结晶取向、热处理条件、使用温度对SrBi2Ta2O9铁电性能的影响.结果表明,以Bi4Ti3O12作为过渡层,采用快速热处理法,SrBiTa=0.82.22时,有助于提高SBT薄膜的剩余极化值,降低矫顽场强和电流漏损.
References
[1] | D J Talor, R J Jones, et al. Appl Phys Lett, 1996, 68(16):2300-2302.
|
[2] | 杨平雄,邓红梅,郑立荣.物理学报,1997,46(7):1449-1455.
|
[3] | T Hayashi, H Takahashi, et al. Jpn J Appl Phys, 1996, 35:4952-4955.
|
[4] | Y Torll, K Taro, et al. Journal of materials science letters,1998, 17(10):827-828.
|
[5] | M A Rodriguez, T J Boyle, et al. J Mater Res, 1996, 11(6):2282-2287.
|
[6] | M Tanala, K Watanabe, et al. Materials research bulletin,1998, 33(5):789-794.
|
[7] | J S Lee, HJKwon, etal. ApplPhysLett, 1999, 74(18):2690-2692.
|
[8] | T Noguchi, T Hase, Y Miyasaka. Jpn J Appl Phys, 1996, 35:4900-4904.
|
[9] | T C Chen, T Li, X Zhang, S B Desu. J Mater Res, 1997, 12(6):1569-1575.
|
[10] | T Hase, T Noguchi, K Takemura, Y Miyasaka. Jpn J Appl Phys, 1998, 37:5198-5202.
|
[11] | Y Shimakawa, Y Kubo, Y Nalagawa, et al. Appl Phys Lett, 1999, 74(13):1904-1906.
|
[12] | S BDesu. DP Vijay, etal. Appl Phys Lett, 1996, 69(12):1719-1721.
|
[13] | T Nasu, M Kibe, et al. Jpn J Appl Phys, 1998, 37:4144-4148.
|
[14] | C S Bang, J Y Son, Q X Jia. Appl Phys Lett, 1998, 72(6):665-667.
|
[15] | K Ishikawa, N Nukaga, H Funakubo. Jpn J Appl Phys, 1999,38:258-260.
|
[16] | S B Desu, P C Joshi, X Zhang, S O Ryu. Appl Phys Lett,1997, 71(8):1041-1043.
|
[17] | G D Hu, J B Xu, I H Wilson, et al. Appl Phys Lett, 1999. 74(24):3711-3713.
|
[18] | 罗维根,丁爱丽.无机材料学报,1996,11(1):19-22.
|
[19] | A P Araujo. J D Cuchlaro, et al. Nature, 1995. 374(13):627-629.
|
[20] | 杨平雄.郑立荣.林成鲁.科学通报,1997,42(2):220-222.
|
[21] | BH Park, SJ Hyun, et al. Appl Phys Lett. 1999, 74(13):1907-1909.
|
[22] | B A David, R John. G Thompson, R L Withers. Acta Cryst,1992, B(48):418-428.
|
[23] | J SLee. H H Kim. etal. Appl Phys Lett. 1998, 73(2):166-168.
|
[24] | P R Graves. G Hua, et al. Journal of solid state chemistry, 1995, 114:112-122.
|
[25] | J Robertson, C W Chen, et al. Appl Phys Lett, 1996,(69):1704-1706.
|
[26] | T Hase. T Noguchi, K Amanuma, Y Miyasaka. Integrates Ferroelectrics, 1997, 15:127-135.
|
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