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材料工程  2015 

退火对ZnO/Cu/ZnO透明导电薄膜性能的影响

DOI: 10.11868/j.issn.1001-4381.2015.01.008, PP. 44-48

Keywords: 退火,ZnO,Cu,透明导电薄膜

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Abstract:

室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系.结果表明退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低.150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10-4Ω·cm,载流子浓度为4.10×1021cm-3.

References

[1]  LIANG Y C. Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer[J]. J Alloys Compd, 2010, 508(1): 158-161.
[2]  CHEN Y J, SHIH Y Y, HO C H, et al. Effect of temperature on lateral growth of ZnO grains grown by MOCVD[J]. Ceram Int, 2010, 36(1): 69-73.
[3]  刘心宇,江民红,周秀娟,等. Al掺杂ZnO薄膜的射频磁控溅射工艺与光电性能研究[J]. 材料工程, 2008, (10): 215-218.LIU X Y , JIANG M H ,ZHOU X J, et al. RF magnetron sputtering process and photoelectric property of Al doped ZnO films[J].Journal of Materials Engineering, 2008, (10): 215-218.
[4]  ZHANG F L, GADISA A, INGANAS O, et al. Influence of buffer layers on the performance of polymer solar cells[J]. Appl Phys Lett, 2004, 84(19): 3906-3908.
[5]  ADACHI C, NAGAI K, TAMOTO N. Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes[J]. Appl Phys Lett, 1995, 66(20): 2679-2681.
[6]  MINAMI T. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes[J]. Thin Solid Films, 2008, 516(17): 5822-5828.
[7]  CHO H J, LEE S U, HONG B, et al. The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes[J]. Thin Solid Films, 2010, 518 (11): 2941-2944.
[8]  SONG C, CHEN H, FAN Y. High-work-function transparent conductive oxides with multilayer films[J]. Appl Phys Express, 2012, 5(4): 041101-041103.
[9]  SAHU D R, HUANG J L. The properties of ZnO/Cu/ZnO multilayer films before and after annealing in the different atmosphere[J]. Thin Solid Films, 2007, 516(2-4): 208-211.
[10]  LEE S, BANG S, PARK J, et al. AZO/Au/AZO multilayer as a transparent conductive electrode[J]. Physica Status Solidi A, 2012, 209(4): 698-701.
[11]  LEE J H, PARK B O. Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol-gel method[J]. Thin Solid Films, 2003, 426(1): 94-99.
[12]  LEE J H, YEO B W, PARK B O. Effects of the annealing treatment on electrical and optical properties of ZnO transparent conduction films by ultrasonic spraying pyrolysis[J]. Thin Solid Films, 2004, 457(2): 333-337.
[13]  FANG Z B, YAN Z J, TAN Y S, et al. Influence of post-annealing treatment on the structure properties of ZnO films[J]. Applied Surface Science, 2005, 241(3-4): 303-308.
[14]  TRAN N H, HARTMANN A J, LAMB R N. Structural order of nanocrystalline ZnO films[J]. J Phys Chem B, 1999, 103 (21): 4264-4268.
[15]  CHO H J, PARK K W, AHN J K, et al. Nanoscale silver-based Al-doped ZnO multilayer transparent-conductive oxide films[J]. J Electrochem Soc, 2009, 156(8): J215-J220.
[16]  KERMANI H, FALLAH H R, HAJIMAHMOODZADEH M. Design and fabrication of nanometric ZnS/Ag/MoO3 transparent conductive electrode and investigating the effect of annealing process on its characteristics[J]. Physica E: Low-dimensional Systems and Nanostructures, 2013, 47: 303-308.
[17]  LEE H M, LEE Y J, KIM I S, et al. Annealing effect of ZnO/Au/ZnO transparent conductive films[J]. Vacuum, 2012, 86 (10): 1494-1498.
[18]  MOHAMED S H. Effects of Ag layer and ZnO top layer thicknesses on the physical properties of ZnO/Ag/ZnO multilayer system[J]. Journal of Physics and Chemistry of Solids, 2008, 69(10): 2378-2384.
[19]  LEE G H, YAMAMOTO Y, KOUROGI M, et al. Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films[J]. Thin Solid Films, 2001, 386(1): 117-120.
[20]  马瑞新,李士娜,锁国权,等.偏压对ITO 薄膜生长模式和光电性能的影响[J]. 材料科学与工艺, 2012, 20(4): 65-69. MA R X, LI S N, SUO G Q, et al. Effects of sputtering bias-voltage on ITO thin films growth modes and photoelectric properties[J].Materials Science and Technology, 2012, 20(4): 65-69.

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