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材料工程  2015 

SiC陶瓷真空钎焊接头显微组织和性能

DOI: 10.11868/j.issn.1001-4381.2015.01.001, PP. 1-5

Keywords: SiC陶瓷,真空钎焊,显微组织,剪切强度

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Abstract:

在高真空条件下采用Ti-35Zr-35Ni-15Cu(质量分数/%)钎料对SiC陶瓷进行了钎焊连接,研究了接头界面组织的形成过程以及工艺参数对接头性能的影响.结果表明钎料与SiC陶瓷发生了复杂的界面反应,生成了多种界面产物.当钎焊温度为960℃,保温时间为10min时,SiC陶瓷侧形成了连续的TiC和Ti5Si3+Zr2Si层,同时Ti5Si3+Zr2Si向钎缝中心生长呈长条状.SiC陶瓷到接头钎缝中心的显微组织依次为SiC/TiC/Ti5Si3+Zr2Si/Zr(s,s)/Ti(s,s)+Ti2(Cu,Ni)/(Ti,Zr)(Ni,Cu).钎焊温度为960℃,保温时间为30min时,长条状的Ti5Si3+Zr2Si贯穿了整个接头.钎焊接头强度随着钎焊温度的升高和钎焊时间的延长都呈现先增大后减小的趋势.当钎焊温度为960℃,保温时间为10min时,接头的剪切强度最高,达到了110MPa.

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