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材料工程  2002 

纳米碳化硅粉的制备及其微波介电行为

, PP. 19-21

Keywords: 介电性能,缺陷,碳热还原,碳化硅纳米粉

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Abstract:

通过碳热还原法合成了纳米SiC粉并对其在8.2~12.4GHz频率范围的介电参数进行了测量.通过改变铝含量和反应气氛分别得到了β,12H和21R型碳化硅粉.β-SiC粉具有比α-SiC粉高得多的相对介电常数ε'r=30~50)和介电损耗角正切值(tgδ=~0.7).虽然Al和N的固溶将SiC粉的电阻率减小到102Ω·cm的量级,但其相对介电常数和介电损耗却并没有增加,反而随Al含量的增加降低.

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