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同位素  2015 

快中子临界装置大厅辐射屏蔽门研制及性能验证

DOI: 10.7538/tws.2015.28.02.0098, PP. 98-106

Keywords: 快中子临界装置,屏蔽门,中子,光子,分层分次工艺

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Abstract:

为提升快中子临界装置的实验能力,在实验大厅旁边扩建了附属建筑物,在实体连接位置形成了一个样品传输通道。为了保证工作人员的辐射安全,需要对通道进行屏蔽。采用蒙特卡罗方法进行屏蔽门的物理设计,确定了含硼石蜡为中子屏蔽材料,不锈钢为光子屏蔽材料。为保证硼在石蜡层上的均匀分布,防止石蜡内部形成空洞,采用了分层分次工艺进行屏蔽门浇铸。为保证屏蔽门对通道的有效覆盖,采用了分步工艺进行安装。辐射剂量监测结果表明,人员日常工作区域的辐射有效剂量为0.125mSv/a,小于建设项目管理目标值2mSv/a,远小于《电离辐射防护与辐射源安全基本标准》规定的放射性工作人员年剂量限值20mSv/a,屏蔽门的研制满足设计和使用要求。

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