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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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In:Er:LiNbO_3晶体生长及抗光损伤性能
Abstract:
掺入摩尔分数为1%In2O3和0.5%Er2O3,从n(Li)/n(Nb)比为0.94,1.05,1.20,1.38的熔体中用提拉法生长InErLiNbO3(InErLN)晶体。测试了晶体的紫外–可见吸收光谱、荧光光谱和抗光损伤阈值。结果表明随着n(Li)/n(Nb)增加,晶体吸收边发生紫移,晶体的荧光发光强度和晶体抗光损伤阈值增强。n(Li)/n(Nb)为1.38的近化学计量比晶体的荧光发光强度和抗光损伤阈值最高。对不同n(Li)/n(Nb)的晶体的吸收边移动和抗光损伤阈值和荧光发光强度增强的机理进行讨论。
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