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制备工艺对多孔Si_3N_4陶瓷介电性能的影响(英文)

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Abstract:

采用添加成孔剂和冰冻–干燥法制备具有不同气孔率(30%~60%)的多孔Si3N4陶瓷,研究了不同制备工艺对多孔Si3N4陶瓷介电性能的影响。结果表明不同的成型工艺制备出具有不同孔分布的氮化硅多孔陶瓷,添加成孔剂制备的多孔陶瓷具有较大的孔,洞分布在致密的基体上;冰冻–干燥法制备的多孔陶瓷具有复合孔分布。对样品的介电特性的研究表明,随着样品的气孔率增加,其介电常数和介电损耗减小;添加成孔剂制备样品的介电常数小于冰冻–干燥法制备样品,而其介电损耗较大,多孔Si3N4陶瓷的介电常数和介电损耗分别在5.21~2.91和9.6×10–3~2.92×10–3范围内变化。

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