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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Mg–Gd–Y系合金微弧氧化陶瓷层生长机理及耐蚀性
Abstract:
利用扫描电镜、X射线衍射等研究了Mg–11%Gd–1%Y–0.5%Zn(质量分数)合金微弧氧化陶瓷层的生长规律,分析了微弧氧化膜层相结构及不同生长阶段的耐蚀性。结果表明在微弧氧化初期,膜层生长遵循直线规律,为典型的电化学极化控制的阳极沉积阶段;随处理时间的延长及膜层增厚,膜层生长符合抛物线规律,属微弧氧化阶段,较氧化初期比,生长速率慢;在弧光放电阶段,抛物线斜率增大,疏松层增厚,生长速率有所提高。微弧氧化疏松层主要以MgSiO3为主,致密层以MgO为主;微弧氧化各阶段,膜层耐蚀性随氧化时间增长而提高,到弧光放电阶段,耐蚀性有所降低。氧化时间为7～12min时,制备的膜层具有较好的耐蚀性。
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