TAKEDA Y S.Development of high-thermal-conductive SiC ceramics[J].Am Ceram Soc Bull,1988,67(12):1961–1963. [2]TAKEDA Y,NAKAMURA K,MAEDA K,et al.Effects of elemental additives on densification,microstructure,strength,and thermal con-ductivity of silicon carbide ceramics[J].Adv Ceram Mater,1986,1(2):162–165. [3]LEE S K,KIM Y C,KIM C H.Microstructural development and me-chanical properties of pressureless sintered SiC with plate-like grains using Al2O3–Y2O3[J].J Mater Sci,1994,29(20):5321–5326. [4]SAKKA T,BIDINGER D D,AKSAY I A.Processing of silicon-carbide mullite-alumina nanocomposites[J].J Am Ceram Soc,1995,78(2):479–486. [5]ZHANG J X,JIANG D L,TAN S H,et al.Aqueous processing of SiC green sheets I:dispersant[J].J Mater Res,2002,17(8):2012–2018. [6]SUN J,GAO L.Dispersing SiC powder and improving its rheological behaviour[J].J Eur Ceram Soc,2001,21(13):2447–2451. [7]BRISCOE B J,KHAN A U,LUCKHAM P F.Optimising the disper-sion on an alumina suspension using commercial polyvalent electrolyte dispersants[J].J Eur Ceram Soc,1998,18(14):2141–2147. [8]HACKLEY V A.Colloidal processing of silicon nitride with poly(acrylic acid):I,adsorption and electrostatic interactions[J].J Am Ce-ram Soc,1997,80(9):2315–2325. [9]RAO R R,ROOPA H N,KANNAN T S.Effect of pH on the dispersi-bility of silicon carbide powders in aqueous media[J].Ceram Int,1999,25(3):223–230. [10]DONG M J,MAO X J,ZHANG Z Q,et al.Gelcasting of SiC using epoxy resin as gel former[J].Ceram Int,2009,35(4):1363–1366. [11]ZHANG T,ZHANG Z Q,ZHANG J X,et al.Preparation of SiC ceramics by aqueous gelcasting and pressureless sintering[J].Mater Sci Eng A,2007,443(15):257–261. [12]XU X,MEI S,FERREIRA J M F,NISHIMURA T,et al.Silicon carbide ceramics through temperature-induced gelation and pressureless sintering[J].Mater Sci Eng A,2004,382(25):335–340 [13]VLAJIC M D,KRSTIC V D.Strength and machining of gelcast SiC ceramics[J].Mater Sci,2002,37(14):2943–2947. [14]TOR G,HAKON S,EIRIK H,et al.Effect of weight loss on liquid-phase-sintered silicon carbide[J].J Am Ceram Soc,1997,80(4):1047–1052. [15]CLEGG W J.The role of carbon in the sintering of boron-doped SiC[J].J Am Ceram Soc,2000,83(5):1039–1043. [16]SAMANTA A K,DHARGUPTA K K,GHATAK S.Decomposition reactions in the SiC–A1–Y–O system during gas pressure sintering[J].Ceram Int,2001,27(2):123–133. [17]MAGNANI G,MINOCCARI G L,PLOTTI L.Flexural strength and toughness of liquid phase sintered silicon carbide[J].Ceram Int,2000,26(5):495–500. [18]WINN E J,CLEGG W J.Role of the powder bed in the densification of silicon carbide sintered with yttria and alumina additives[J].J Am Ceram Soc,1999,82(12):3466–3470. [19]PUJAR V V,JENSEN R P,PADTURE N P.Densification of liquid phase sintered silicon carbide[J].Mater Sci Lett,2000,19(11):1011–1014. [20]BAUD S,THEVENOT F,CHATILLON C.High temperature sintering of SiC with oxide additives:IV.Powder beds and the influence of va-porization on the behaviour of SiC compacts[J].J Eur Ceram Soc,2003,23(1):29–36. [21]SANO S,BANNO T,MAEDA M,et al.Slip casting and sintering of silicon carbide(Part1)[J].J Ceram Soc Jpn,1996,104(10):984–988. [22]ZHOU L J,HUANG Y,XIE Z P,et al.Gas-discharging reactions and their effect on microstructure of green bodies in gelcasting of non-oxide Materials[J].Mater Letts,2000,45(1):51–57.
