ZHENG J,YANG Y,YU B,et al.[0001]oriented aluminum nitride one-dimensional nanostructures:synthesis,structure evolution,and electrical properties[J].Acs Nano,2008,2:134-142. [2]XIE T,YE M,FANG X S,et al.Morphology-controlled growth of AlN one-dimensional nanostructures[J].J Mater Sci Technol,2008,24:608-614. [3]TANG Y B,CONG H T,CHENG H M.Synthesis and properties of one-dimensional aluminum nitride nanostructures[J].Nano,2007,2:307-331. [4]YANG S L,GAO R S,NIU P L,et al.Room-temperature ferromag-netic behavior of cobalt-doped AlN nanorod arrays[J].Appl Phys A Mater Sci Process,2009,96:769-774. [5]HE J H,YANG R S,CHUEH Y L,et al.Aligned AlN nanorods with multi-tipped surfaces-growth,field-emission,and cathodolumines-cence properties[J].Adv Mater,2006,18:650-654. [6]YANG J,LIU T W,HSU C W,et al.Controlled growth of aluminium nitride nanorod arrays via chemical vapour deposition[J].Nanotech-nology,2006,17:S321-S326. [7]SHI S C,CHEN C F,CHATTOPADHYAY S,et al.Growth of single-crystalline wurtzite aluminum nitride nanotips with a self-selective apex angle[J].Adv Funct Mater,2005,15:781-786. [8]TANG Y B,CONG H T,CHEN Z G,et al.An array of Eif-fel-tower-shape AIN nanotips and its field emission properties[J].Appl Phys Lett,2005,86:233104. [9]WU Q,HU Z,WANG X Z,et al.Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires[J].J Mater Chem,2003,13:2024-2027. [10]ZHAO Q,ZHANG H Z,XU X Y,et al.Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate[J].Appl Phys Lett,2005,86(19):193101. [11]LEI M,YANG H,GUO Y F,et al.Synthesis and optical property of high purity AlN nanowires[J].Mater Sci Eng B Solid State Mater AdvTech,2007,143:85-89. [12]XU C K,XUE L,YIN C R,et al.Formation and photoluminescence properties of AlN nanowires[J].Phys Status Solidi a Appl Res,2003,198:329-335. [13]WU Q,HU Z,WANG X Z,et al.A simple route to aligned AlN nanowires[J].Diam Relat Mater,2004,13:38-41. [14]SHEN L H,CHENG T M,WU L J,et al.Synthesis and optical proper-ties of aluminum nitride nanowires prepared by arc discharge method[J].J Alloy Compd,2008,465:562-566. [15]LV H M,CHEN G D,YE H G,et al.Synthesis of monocrystal alumi-num nitride nanowires at low temperature[J].J Appl Phys,2007,101:053526. [16]TRENTLER T J,HICKMAN K M,GOEL S C,et al.Solution-liquid-solid growth of crystalline Iii-V semiconductors—an analogy to va-por-liquid-solid growth[J].Science,1995,270:1791-1794. [17]WANG H,LIU G,YANG W,et al.Bicrystal AlN zigzag nanowires[J].J Phys Chem C,2007,111:17169-17172. [18]CUI Y,LAUHON L J,GUDIKSEN M S,et al.Diameter-controlled synthesis of single-crystal silicon nanowires[J].Appl Phys Lett,2001,78:2214-2216. [19]YAN G Y,ZHANG Y,ZENG B H,et al.In2O3nanotowers:controlled synthesis and mechanism analysis[J].Cryst Growth Des,2007,7:940-943.
