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氟氧微晶玻璃/二氧化硅系低温共烧陶瓷材料的煅烧行为

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Abstract:

制备SiO2–B2O3–Al2O3–AlF3–Li2O–Na2O–K2O–CaO系氟氧低温微晶玻璃/二氧化硅共烧陶瓷材料,用X射线衍射、扫描电子显微镜和阻抗分析仪分析讨论氟氧微晶玻璃/氧化硅主晶相的形成、致密性及介电性能。结果表明氟氧玻璃/氧化硅陶瓷材料体系样品的最佳煅烧温度范围为750~780℃,煅烧时部分玻璃相转变成方石英,有助于进一步降低相对介电常数(εr)和介电损耗(tanδ),在780℃煅烧时,样品的体积密度达到最大值(2.31g/cm–3),此时在1GHz频率测试,εr=4.42,tanδ=3×10–3,所制备的材料是一种在基板、无源集成和电子封装等方向都具有较大应用前景的低温共烧陶瓷材料。

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