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V2O5掺杂ZnO–Bi2O3–Co2O3–MnCO3–TiO2低压压敏陶瓷的微结构和电性能

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Abstract:

采用固相反应法制备V2O5掺杂的ZnO–Bi2O3–Co2O3–MnCO3–TiO2(ZBCMT)低压压敏陶瓷。利用X射线衍射、扫描电子显微镜、压敏电阻直流参数仪和阻抗分析仪研究了V2O5掺杂对ZBCMT陶瓷微结构、压敏性能、电场强度–电流密度特性和介电性能的影响。结果表明掺摩尔分数为0.010%的V2O5时,ZBCMT陶瓷的综合性能最佳,压敏电压梯度为31.1V/mm,漏电流密度为0.02μA/mm2,非线性系数为25,施主浓度Nd和界面态密度Ns的最小值分别为0.810×1018/cm3和2.632×1012/cm2,耗尽层宽度ω的最大值为32.49nm,同时,出现了较高的势垒高度fB(0.908eV)。随V2O5掺杂量的增加,ZBCMT陶瓷的Nd和Ns增加,而ω和fB减小,这与受主杂质V2O5的掺杂有关。

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