TZOU Wencheng, CHAN Chaochin, CHENG Pingshou, et al. Effect of BaTi4O9 on the sintering and microwave dielectric characteristics of Ba(Zn1/3Ta2/3)O3 ceramics [J]. Mater Sci, 2005, 40(17): 4711–4714. [2] KIM Min-han, SAHN Nahm, LEE Woosung, et al. Structural variation and microwave dielectric properties of TiO2-doped Ba(Zn1/3Ta2/3)O3 ceramics [J]. J Eur Ceram Soc, 2004, 24(13): 3547–3552. [3] 吴顺华, 王爽, 王国庆, 等. 添加剂Mn和烧结温度对Ba(Zn1/3? Ta2/3)O3体系介电性能的影响[J]. 天津大学学报, 2005, 38(1): 80–84. WU Shunhua, WANG Shuang, WANG Guoqing, et al. J Tianjin Univ (in Chinese), 2005, 38(1): 80–84. [4] DESU S B, O'BRYAN H M. Microwave loss quality of BZT ceramics [J]. J Am Ceram Soc, 1985, 68(10): 546–551. [5] VERES A, MARINEL S, ROULLAND F, et al. Dielectric properties of BMN and effect of B2O3 and LiF addition [J]. J Eur Ceram Soc, 2005, 25(4): 2759–2762. [6] PARK H S, HUR K H, KIM W S, et al. Non-reducible, low temperature dielectric ceramic composition, capacitor and method of preparing [P]. US Patent, 6777363. 2004–08–17. [7] REANEY I M, WISE P L, QAZI I, et al. Ordering and quality factor in 0.95 Ba(Zn1/3Ta2/3)O3–0.05 SrGa1/2Ta1/2O3 production resonators [J]. J Eur Ceram Soc, 2003, 23(16): 3021–3034. [8] IOACHIM A, TOCASAIN M I, BANCIU M G, et al. Annealing effects on properties of Ba(Zn1/3Ta2/3)O3 dielectric materials [C]//International Semiconductor Conference, Bucharest-Maqurele, Romania, 2006: 253– 256. [9] WERSING W. High frequency ceramic dielectric and their application for components [J]. Electron Ceram, 1991, 47(17): 67–119.
