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硅酸盐学报 2013

中子辐照半绝缘SiC单晶的光学性质

王鹏飞,阮永丰,侯贝贝,陈敬

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Abstract:

利用荧光光谱、紫外–可见–近红外透射光谱和Raman光谱对经1.67×1020n/cm2中子辐照的半绝缘SiC的光学性质进行了研究。结果表明中子未辐照的和辐照后退火温度低于1000℃的样品未出现任何发射峰；1200℃退火的样品在510、540和575nm处出现了3个绿色发射峰，其中，510和540nm处的发射峰在经过1600℃退火后依然存在。中子辐照导致SiC的截止波长由393nm增大到1726nm；随退火温度提高，截止波长逐渐减小，并在1600℃退火后完全回复。Raman光谱显示辐照诱发了许多新的振动模，如187、278、435和538cm–1处的Si—Si键振动模，600、655和709cm–1处的Si—C键振动模和1419cm–1处C—C键振动模。辐照缺陷引起声子限制效应，表现为FTO2/6和FLO0/6Raman特征峰的不对称性展宽和红移。在低于1000℃退火阶段，主要表现为不对称性展宽和红移逐渐减弱；在高于1000℃退火阶段，主要表现为辐照产生的新Raman峰逐渐消失。

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