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Ti-B位置换改性硅酸镁陶瓷的微观结构与微波介电性能

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Abstract:

研究了Ti-B位置换改性Mg2SiO4陶瓷微结构和微波介电性能。结果表明在合成Mg2SiO4陶瓷过程中,Mg2SiO3总是作为第二相出现,Ti的引入能够有效地抑制Mg2SiO3的出现;但是,Ti不是进入Si—O四面体取代置换Si形成Mg2(Si1-xTix)O4固溶体,而是Mg与反应形成Mg2TiO4、Mg2Ti2O5等第二相。随着x值增加,Mg2(Si1-xTix)O4陶瓷的相对介电常数(εr)从6.8增加到8.1,机械品质因数与频率乘积(Q×f)也获得显著改善,但谐振频率温度系数(τf)不会因Ti引入而得到优化。在x=0.1时,Mg2(Si0.9Ti0.1)O4陶瓷获得最优的微波介电性能εr=7.4,Q×f=73760GHz,τf=-6×10-6/℃。

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