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溶质离子对AZ31B镁合金微弧诱发过程和陶瓷层结构的影响

DOI: 10.7521/j.issn.0454-5648.2014.06.18

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Abstract:

采用微弧氧化方法在AZ31B镁合金表面制备了陶瓷层。研究了AZ31B镁合金微弧氧化溶液体系中KOH和Na2SiO3浓度对微弧等离子体诱发过程和陶瓷层微观结构的影响，通过涡流测厚仪、扫描电子显微镜和X射线衍射仪分析了陶瓷层的物相组成、微观形貌和厚度随KOH和Na2SiO3浓度的变化规律。研究表明恒流模式下，KOH溶液在AZ31B镁合金表面诱发微弧时存在1个临界浓度，约为27mmol/L，且随着KOH浓度的增大，对基体和氧化膜的溶解作用加剧，影响微弧等离子体诱发的稳定性。Na2SiO3含量显著影响镁合金表面微弧诱发过程和陶瓷层的微观结构，随着Na2SiO3浓度的增大，陶瓷层生长速率增快，膜层表面由光滑转变为微孔结构，且孔径逐渐增大；Na2SiO3浓度在1.6～6.4mmol/L时陶瓷层中主要以MgO为主，Na2SiO3浓度大于16mmol/L时，Mg2SiO4和非晶相明显增多。

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