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OALib Journal期刊
ISSN: 2333-9721
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钽镁酸钡缓冲层对锆钛酸铅铁电薄膜性能的影响
DOI: 10.14062/j.issn.0454-5648.2015.11.06
Abstract:
采用溶胶–凝胶工艺在Pt/Ti/SiO2/Si基片上，通过引入钽镁酸钡[Ba(Mg1/3Ta2/3)O3,BMT]缓冲层，制备了锆钛酸铅[Pb(Zr0.52Ti0.48)O3,PZT]铁电薄膜。研究了BMT缓冲层对PZT铁电薄膜结晶和性能的影响。结果表明引入BMT缓冲层利于PZT薄膜的生长；PZT薄膜具有钙钛矿结构，且没有裂纹、结晶良好、致密性好；缓冲层的厚度对PZT铁电薄膜的微观结构和铁电性能有重要影响。随BMT缓冲层厚度增加，PZT晶粒增大，介电损耗tanδ逐渐减少，介电常数εr和剩余极化强度Pr先增大后减少，矫顽场Ec先减少后增大。当BMT缓冲层厚约为10nm时，PZT薄膜具有最优的铁电性能εr=1850，Pr=20.2μC/cm2,Ec=43.9kV/mm。这与BMT与PZT具有相似的晶格常数、较小的晶格失配度和相近的禁带宽度有关。
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