GaN基蓝光发光二极管分布布拉格反射器设计研究
, PP. 145-150
Keywords: 光电子学 ,GaN ,传输矩阵法 ,分布布拉格反射器 ,入射角
Abstract:
采用传输矩阵法对GaN基蓝光发光二极管分布布拉格反射器（DBR）反射光谱进行研究。计算发现正入射时S偏振(TE模)与P偏振(TM模)反射带是一致的；S偏振和P偏振反射带随着入射角的增大都向高频(短波)方向移动，且两者之间的差别也随之增大，DBR反射带蓝移快慢与入射介质相关；低折射率入射介质时DBR具有更宽角度响应。通过修改结构参数多次计算表明入射角修正的方法能较快的找到提高全方向反射的结构。复合DBR以降低反射率或者成倍增加膜层厚度为代价实现大角度范围的反射。复合DBR比传统DBR有更好的光谱特性,这对提高发光二极管的出光效率有现实意义。
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