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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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高密度聚苯胺纳米线阵列的制备及在紫外探测器中的应用研究
DOI: 10.11777/j.issn1000-3304.2015.14258, PP. 312-318
Keywords: 二氧化锰,聚苯胺纳米线,阵列,p-n结,紫外探测器
Abstract:
基于p型半导体与n型半导体间的特殊p-n结效应可有效提高紫外探测器的紫外光敏性能,研究了高密度p型聚苯胺(PANI)纳米线阵列的制备方法,及其与n型单晶硅片组装为具有p-n结效应的高性能紫外探测器的方法.采用旋涂煅烧法在单晶硅片表面制备了二氧化锰层,研究了以其为种子层制备高密度聚苯胺纳米线阵列的方法,并考察了不同制备条件对聚苯胺形貌的影响,揭示了聚苯胺纳米线阵列的形成机理.结果表明,利用二氧化锰种子层对溶液中苯胺的氧化作用,可优先在二氧化锰层表面形成聚苯胺纳米粒子,然后再向溶液中加入另一氧化剂过硫酸铵(APS),可使聚苯胺纳米粒子沿垂直于衬底方向进一步生长,从而制得了分布均匀的高密度p型聚苯胺纳米线阵列.利用p型聚苯胺纳米线阵列与n型单晶硅片间特殊的p-n结效应,构筑了性能优良的紫外探测器,对紫外光响应速度快、恢复时间短、稳定性好.当外置偏压为0V时,光电流可达9.2×10-8A;且随外置偏压提高,光电流强度大大增强,当外置偏压提高至5V时,光电流可达3.2×10-5A,比0V时提高了约1000倍.
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