OALib Journal期刊
ISSN: 2333-9721
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氧化剂对磺化石墨烯负载聚苯胺复合材料结构与电化学性能的影响
DOI: 10.3724/SP.J.1105.2012.12014, PP. 980-987
Keywords: 聚苯胺,磺化石墨烯,界面聚合,超级电容器
Abstract:
以磺化石墨烯(sGNS)为基板材料,通过界面聚合方法制备出不同分级结构磺化石墨烯负载聚苯胺(sGNS/PANI)复合材料,并系统研究了氧化剂类型对复合材料的化学组成、形貌结构和超级电容特性的影响.结果显示,过硫酸铵为氧化剂合成的复合材料中PANI的产率和氧化程度最高,其形貌呈现出sGNS垂直生长PANI纳米短棒阵列结构,PANI的共轭程度和结晶性均较高,从而赋予复合材料高的比电容(497.3Fg-1),以及良好的倍率特性和循环稳定性(2000次循环后比电容仅损失5.7%).当以三氯化铁为氧化剂时,复合材料中PANI的得率很低,并在sGNS表面形成较薄的包覆层,此时复合材料的比电容最低(228.5Fg-1),但充放电循环性能较好(2000次循环后比电容的保持率为87.4%).当氧化剂为高锰酸钾时,复合材料中PANI以团聚态颗粒无规堆积在sGNS表面,PANI以无定型结构存在,其比电容虽然较高(419.6Fg-1),但其倍率特性和充放电循环性能较差(2000次循环后比电容损失19.9%).
References
[1] | 4 Kuila B K,Nandan B,Bohme M,Janke A,Stamm M.Chem Commun,2009,(38):5749~5751
|
[2] | 5 Sun Minqiang(孙敏强),Zhu Zhongze(朱忠泽),Li Xingwei(李星玮),Wang Gengchao(王庚超).Acta Polymerica Sinica(高分子学报),2011,(6):639~644
|
[3] | 12 Wang D W,Li F,Zhao J P,Ren W C,Chen Z G,Tan J,Wu Z S,Gentle I,Lu G Q,Cheng H M.ACS Nano,2009,3(7):1745~1752
|
[4] | 14 Yan J,Wei T,Shao B,Fan Z,Qian W,Zhang M,Wei F.Carbon,2010,48(2):487~493
|
[5] | 15 Zhang K,Zhang L L,Zhao X S,Wu J S.Chem Mater,2010,22(4):1392~1401
|
[6] | 16 Mishra A K,Ramaprabhu S.J Phys Chem C,2011,115(29):14006~14013
|
[7] | 20 Liu S,Liu X H,Li Z P,Yang S R,Wang J Q.New J Chem,2011,35(2):369~374
|
[8] | 23 Liu S,Liu X H,Li Z P,Yang S R,Wang J Q.New J Chem,2011,35(2):369~374
|
[9] | 25 Guan H,Fan L Z,Zhang H C,Qu X H.Electrochim Acta,2010,56(2):964~968
|
[10] | 27 Si Y,Samulski E T.Nano Lett,2008,8(6):1679~1682
|
[11] | 29 Li X G,Li H,Huang M R.Chem Eur J,2007,13(31):8884~8896
|
[12] | 30 Li X G,Lu Q F,Huang M R.Chem Eur J,2006,12(5):1349~1359
|
[13] | 31 Hao Q L,Wang H L,Yang X J,Lu L D,Wang X.Nano Res,2011,4(4):323~333
|
[14] | 1 Novak P, Muller K,Santhanam K S V,Hass O.Chem Rev,1997,97(1):207~282
|
[15] | 2 Xiao M M,Tong B,Zhao W,Shi J B,Pan Y X,Shen J B,Zhi J G,Dong Y P.Chinese J Polym Sci,2010,28(3):331~336
|
[16] | 3 Fan L Z,Hu Y S,Maier J,Adelhelm P,Smarsly B,Antonietti M.Adv Funct Mater,2007,17(16):3083~3087
|
[17] | 6 Yang Hongsheng(杨红生),Zhou Xiao(周啸),Zhang Qingwu(张庆武).Acta Phys-Chim Sin(物理化学学报),2005,21(4):414~418
|
[18] | 7 Frackowiak E,Khomenko V,Jurewicz K,Lota K,Béguin F.J Power Sources,2006,153(2):413~418
|
[19] | 8 Zhou Y,Qin Z Y,Li L,Zhang Y,Wei Y L,Wang L F,Zhu M F.Electrochim Acta 2010,55(12):3904~3908
|
[20] | 9 Stoller M D,Park S J,Zhu Y W,An,J H,Ruoff R S.Nano Lett,2008,8(10):3498~3502
|
[21] | 10 Wang Y,Shi Z Q,Huang Y,Ma Y F,Wang C Y,Chen M M,Chen Y S.J Phys Chem C,2009,113(30):13103~13107
|
[22] | 11 Fan Z J,Yan J,Zhi L J,Zhang Q,Wei T,Feng J,Zhang M L,Qian W Z,Wei F.Adv Mater,2010,22(33):3723~3728
|
[23] | 13 Biswas S,Drzal L T.Chem Mater,2010,22(20):5667~5671
|
[24] | 17 Gómez H,Ram M K,Alvi F,Villalba P,Stefanakos E,Kumar A.J Power Sources,2011,196(8):4102~4108
|
[25] | 18 Mao L,Zhang K,Sze H,Chan O,Wu J S.J Mater Chem,2012,22(1):80~85
|
[26] | 19 Wang H L,Hao Q L,Yang X J,Lu L D,Wang X.Nanoscale,2010,2(10):2164~2170
|
[27] | 21 Wu Q,Xu Y X,Yao Z Y,Liu A R,Shi G Q.ACS Nano,2010,4(4):1963~1970
|
[28] | 22 Lu Xiangjun(卢向军),Dou Hui(窦辉),Yang Sudong(杨苏东),Hao Liang(郝亮),Zhang Fang(张方),Zhang Xiaogang(张校刚).Acta Phys-Chim Sin(物理化学学报),2011,27(10):2333~2339
|
[29] | 24 Huang J X,Kaner R B.J Am Chem Soc,2004,126(3):851~855
|
[30] | 26 Hummers W S,Offeman R E.J Am Chem Soc,1958,80(6):1339~1339
|
[31] | 28 Jin L F,Wang G C,Li X W,Li L B.J Appl Electrochem,2011,41(4):377~382
|
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