JANKOVIC N D, NEILL A O. 2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates[J]. Solid-State Electronics, 2004, 45(1): 225-230.
ZHANG Zhi-hua, LIU Yu-kui, TAN Kai-zhou, et al.Effects of different Ge-profile in base region on performance of SiGe HBT[J]. Microelectronics, 2013, 43(6): 859-866. (in Chinese)
[4]
KASHYAP A, CHAUHAN R K. Effect of Ge profile design on the performance of an n-p-n SiGe HBT-based analog circuit[J]. Microelectronics Journal, 2008, 39(12): 1770-1773.
[5]
CHANG S T, LIU Y H, LEE M H, et al. Optimal Ge profile design for base transit time of Si/ SiGe HBTs[J]. Materials Science in Semiconductor Processing, 2005(8): 289-294.
[6]
MIURA M, SHIMAMOTO H, ODA K, et al. Ultra-low-power SiGe HBT technology for wide-range microwave applications [ C ] Bipolar/ BiCMOS Circuits and Technology Meeting. Monteray, CA: IEEE, 2008: 129-
[7]
132.
[8]
ZHANG W R, YANG J W, LIU H J, et al. The temperature dependence of DC characteristics and its implication in microwave power Si/ SiGe/ Si HBT's[C]Microwave and Milli-wave Technology (ICMMR/ T). New
[9]
York: IEEE, 2004: 594-598.
[10]
FU J, BACH K. A simple electrical approach to extracting the difference in bandgap across neutral base for SiGe HBTs[J]. Materials Science in Semiconductor Processing,
[11]
2005, 8(1): 301-306.
[12]
KHANDURI G, PANWAR B. An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs [ J ]. Solid-State Electronics, 2007, 51(6): 961-964.
XIAO Ying, ZHANG Wan-rong, JIN Dong-yue, et al. Effect of bandgap engineering on thermal characteristic of radio frequency power SiGe heterojnction bipolar transistor[J]. Acta Phys Sin, 2011, 60(4): 044402-1-044402-6.(in Chinese)
ZHAO Xin, ZHANG Wan-rong, JIN Dong-yue, et al.Effect of Ge profile in base region on thermal charachteristics of SiGe HBTs[J]. Acta Phys Sin, 2012,61(13): 134401-1-134401-7. (in Chinese)
CHEN Liang, ZHANG Wan-rong, JIN Dong-yue, et al.Improvement on thermalstability of power heterojunction bipolar transistor using non-uniform finger spacing [ J].Acta Phys Sin, 2011, 60(7): 078501-1-078501-5. (in Chinese)
