YEH Y T,ChOU C K,HSU Y C,et al.Threshold current density of electromigration in eutectic SnPb solder[J].Appl Phys Lett,2005,86(20):203504-1-203504-3.
[2]
CHOI Zung-sun,MONIG REINER,THOMPSON C V.Dependence of the electromigration flux on the crystallographic orientations of different grains in polycrystalline copper interconnects[J].Appl Phys Lett,2007,90(24):241913-1-241913-3.
[3]
HAU-RIEGE C S,HAU-RIEGE S P,MARATHE A P.The effect of interlevel dielectric on the critical tensile stress to void nucleation for the reliability of Cu interconnects[J].Appl Phys Lett,2004,96(10):5792-5796.
[4]
HU C K,GIGNAC L,ROSENBERG R.Reduced electromigration of Cu wires by surface coating[J].Appl Phys Lett, 2002,81(10):1782-1784.
[5]
CHEN Z Z,QIN Z X,HU C Y.Ohmic contact formation of Ti/Al/Ni/Au to n-GaN By two-step annealing method[J]. Materials Science and Engineering B,2004,111(1):36-39.
[6]
MOTAYED A,BTHE R,WOOD M C,et al.Electrical,thermal,and microstructural characteristics of Ti/Al/Ti/Au multiplayer Ohmic contacts to n-type GaN[J].Journal of Applied Physics,2003,93(2):1087-1094.
[7]
LU C Z,CHEN H N,LV X L,et al.Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multiplayer ohmic contact to n-GaN[J].Journal of Applied Hysies,2002,91(11):9218-9224.
[8]
XU L H,PANG J H L,TU K N.Effect of electromigration-induced back stress gradient on nanoindentation marker movement in SnAgCu solder joints[J].Appl Phys Lett,2006,89(22):221909-1-221909-3.
[9]
ZHANG L,OU S Q,HUANG J,et al.Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints[J].Appl Phys Lett,2006,8(1):012106-1-012106-3.
[10]
OUYANG F Y,CHEN K,TU K N,et al.Effect of current crowding on whisker growth at the anode in flip chip solder joints[J].Appl Phys Lett,2007,91(23):231919-1-231919-3.
[11]
SHAO T L,CHEN Y H,CHIU S H,et al.Electromigration failure mechanisms for SnAg 3.5 solder bumps on Ti/Cr-Cu/ Cu and Ni(P)/Au metallization pads[J].Appl Phys Lett,2004,96(8):4518-4524.
